High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition
Identifieur interne : 00A622 ( Main/Repository ); précédent : 00A621; suivant : 00A623High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition
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Abstract
Highly conductive and transparent Mo-doped indium oxide (IMO) thin films were grown on glass and (100) yttria-stabilized zirconia (YSZ) single-crystal substrates by pulsed laser deposition. The electrical, optical, and structural properties were measured for films grown from 0, 1, 2, and 4 wt% Mo-doped targets. Films grown from the 2 wt% Mo-doped target had the best overall properties. In particular, for biaxially textured 2 wt% Mo IMO films grown on (100) YSZ, the conductivity was ∼3000 Scm-1 with a mobility greater than 95 cm2V-1s-1. In the visible, the optical transmittance normalized to the substrate was greater than 90%. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High-mobility transparent conducting Mo-doped In<sub>2</sub>O<sub>3</sub> thin films by pulsed laser deposition</title><author><name sortKey="Warmsingh, C" uniqKey="Warmsingh C">C. Warmsingh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Colorado School of Mines, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>Colorado School of Mines, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Yoshida, Y" uniqKey="Yoshida Y">Y. Yoshida</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Colorado School of Mines, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>Colorado School of Mines, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Readey, D W" uniqKey="Readey D">D. W. Readey</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Colorado School of Mines, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>Colorado School of Mines, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Teplin, C W" uniqKey="Teplin C">C. W. Teplin</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Perkins, J D" uniqKey="Perkins J">J. D. Perkins</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Parilla, P A" uniqKey="Parilla P">P. A. Parilla</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Gedvilas, L M" uniqKey="Gedvilas L">L. M. Gedvilas</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Keyes, B M" uniqKey="Keyes B">B. M. Keyes</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Ginley, D S" uniqKey="Ginley D">D. S. Ginley</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0144304</idno><date when="2004-04-01">2004-04-01</date><idno type="stanalyst">PASCAL 04-0144304 AIP</idno><idno type="RBID">Pascal:04-0144304</idno><idno type="wicri:Area/Main/Corpus">00BC31</idno><idno type="wicri:Area/Main/Repository">00A622</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier mobility</term><term>Electrical conductivity</term><term>Experimental study</term><term>Impurities</term><term>Indium compounds</term><term>Molybdenum</term><term>Pulsed laser deposition</term><term>Semiconductor thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6855J</term><term>6855L</term><term>7866N</term><term>7361N</term><term>8115F</term><term>7220F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Molybdène</term><term>Impureté</term><term>Couche mince semiconductrice</term><term>Dépôt laser pulsé</term><term>Mobilité porteur charge</term><term>Conductivité électrique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Molybdène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Highly conductive and transparent Mo-doped indium oxide (IMO) thin films were grown on glass and (100) yttria-stabilized zirconia (YSZ) single-crystal substrates by pulsed laser deposition. The electrical, optical, and structural properties were measured for films grown from 0, 1, 2, and 4 wt% Mo-doped targets. Films grown from the 2 wt% Mo-doped target had the best overall properties. In particular, for biaxially textured 2 wt% Mo IMO films grown on (100) YSZ, the conductivity was ∼3000 Scm-1 with a mobility greater than 95 cm2V-1s-1. In the visible, the optical transmittance normalized to the substrate was greater than 90%. © 2004 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>95</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High-mobility transparent conducting Mo-doped In<sub>2</sub>O<sub>3</sub> thin films by pulsed laser deposition</s1></fA08><fA11 i1="01" i2="1"><s1>WARMSINGH (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>YOSHIDA (Y.)</s1></fA11><fA11 i1="03" i2="1"><s1>READEY (D. W.)</s1></fA11><fA11 i1="04" i2="1"><s1>TEPLIN (C. W.)</s1></fA11><fA11 i1="05" i2="1"><s1>PERKINS (J. D.)</s1></fA11><fA11 i1="06" i2="1"><s1>PARILLA (P. A.)</s1></fA11><fA11 i1="07" i2="1"><s1>GEDVILAS (L. M.)</s1></fA11><fA11 i1="08" i2="1"><s1>KEYES (B. M.)</s1></fA11><fA11 i1="09" i2="1"><s1>GINLEY (D. S.)</s1></fA11><fA14 i1="01"><s1>Colorado School of Mines, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>3831-3833</s1></fA20><fA21><s1>2004-04-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0144304</s0></fA47><fA60><s1>P</s1><s3>CC</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Highly conductive and transparent Mo-doped indium oxide (IMO) thin films were grown on glass and (100) yttria-stabilized zirconia (YSZ) single-crystal substrates by pulsed laser deposition. The electrical, optical, and structural properties were measured for films grown from 0, 1, 2, and 4 wt% Mo-doped targets. Films grown from the 2 wt% Mo-doped target had the best overall properties. In particular, for biaxially textured 2 wt% Mo IMO films grown on (100) YSZ, the conductivity was ∼3000 Scm-1 with a mobility greater than 95 cm2V-1s-1. In the visible, the optical transmittance normalized to the substrate was greater than 90%. © 2004 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55L</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H66N</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C61N</s0></fC02><fC02 i1="05" i2="3"><s0>001B80A15F</s0></fC02><fC02 i1="06" i2="3"><s0>001B70B20F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6855L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7866N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7361N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>8115F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7220F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Molybdène</s0><s2>NC</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Molybdenum</s0><s2>NC</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Impureté</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Impurities</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Dépôt laser pulsé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Pulsed laser deposition</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Mobilité porteur charge</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Carrier mobility</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Conductivité électrique</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Electrical conductivity</s0></fC03><fN21><s1>089</s1></fN21><fN47 i1="01" i2="1"><s0>0412M000237</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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